STRESS DEPENDENCE OF ELECTRON-HOLE LIQUID PARAMETERS IN SILICONWAGNER J; FORCHEL A; SAUER R et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 991-994; BIBL. 12 REF.Article

ON THE CORRELATION OF "HOT" AND "COLD" ELECTRON-HOLE DROP DENSITIES IN UNIAXIALLY STRESSED SILICONWAGNER J; FORCHEL A; SAUER R et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 11; PP. 917-921; BIBL. 13 REF.Article

THERMODYNAMICAL PROPERTIES OF THE ELECTRON-HOLE SYSTEM OUTSIDE THE REGION OF DROPLET FORMATION IN GERMANIUMSCHWEIZER H; FORCHEL A; KLINGENSTEIN W et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 1; PP. 343-350; ABS. GER; BIBL. 18 REF.Article

SYSTEMATICS OF ELECTRON-HOLE LIQUID CONDENSATION FROM STUDIES OF SILICON WITH VARYING UNIAXIAL STRESSFORCHEL A; LAURICH B; WAGNER J et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2730-2747; BIBL. 68 REF.Article

Quantum dot micropillarsREITZENSTEIN, S; FORCHEL, A.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 3, issn 0022-3727, 033001.1-033001.25Article

EXPERIMENTAL VERIFICATION OF SCALING RELATIONS FOR ELECTRON-HOLE LIQUID CONDENSATIONFORCHEL A; LAURICH B; MOERSCH G et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 10; PP. 678-682; BIBL. 17 REF.Article

STRESS DEPENDENT KINETICS OF ELECTRON-HOLE DROPS IN UNIAXIALLY DEFORMED SILICONWAGNER J; FORCHEL A; SCHMID W et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 4; PP. 275-279; BIBL. 20 REF.Article

Enhancement of electron-pair mobilities in thin GaAs/Al_xGa_1-xAs quantum wellsHILLMER, H; FORCHEL, A; TU, C. W et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 3, pp 1240-1245, issn 0163-1829Article

Y-branch switch frequency bisectionHARTMANN, D; WORSCHECH, L; KOWALZIK, P et al.Electronics Letters. 2006, Vol 42, Num 17, pp 1005-1006, issn 0013-5194, 2 p.Article

1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidthGOLLUB, D; MOSES, S; FORCHEL, A et al.Electronics Letters. 2004, Vol 40, Num 19, pp 1181-1182, issn 0013-5194, 2 p.Article

Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wellsBUTOV, L. V; KULAKOVSKII, V. D; FORCHEL, A et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17933-17937, issn 0163-1829Article

Metalorganic vapor phase epitaxial growth, characterization and annealing experiments on InP doping superlatticesMOLASSIOTI, A; SCHOLZ, F; FORCHEL, A et al.Journal of electronic materials. 1990, Vol 19, Num 8, pp 851-856, issn 0361-5235Article

Fabrication and optical characterisation of first order DFB GaInP/AlGaInP laser structures at 639 nmKORN, M; KÖRFER, T; FORCHEL, A et al.Electronics Letters. 1990, Vol 26, Num 9, pp 614-615, issn 0013-5194Article

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μmRÖSSNER, K; HÜMMER, M; BENKERT, A et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 30, Num 1-2, pp 159-163, issn 1386-9477, 5 p.Article

Photonic crystal waveguide directional couplers as wavelength selective optical filtersZIMMERMANN, J; KAMP, M; FORCHEL, A et al.Optics communications. 2004, Vol 230, Num 4-6, pp 387-392, issn 0030-4018, 6 p.Article

980 nm quantum dot lasers with very small threshold current densitiesKLOPF, F; REITHMAIER, J. P; FORCHEL, A et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 845-848, issn 0370-1972Conference Paper

Room temperature stimulated emission from a CdTe/CdMgTe superlattice laser structure in the red spectral rangeBACHER, G; FORCHEL, A; WAAG, A et al.IEEE photonics technology letters. 1994, Vol 6, Num 2, pp 125-127, issn 1041-1135Article

Rapid thermal annealing induced order-disorder transition in Ga_0.52In_0.48P/(Al_0.35Ga_0.65)_0.5In_0.5P heterostructuresHÄMISCH, Y; STEFFEN, R; FORCHEL, A et al.Applied physics letters. 1993, Vol 62, Num 23, pp 3007-3009, issn 0003-6951Article

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wellsBICKL, T; JACOBS, B; STRAKA, J et al.Applied physics letters. 1993, Vol 62, Num 10, pp 1137-1139, issn 0003-6951Article

Time-resolved investigation of recombination and carrier capture in spatially homogeneous 2D electron-hole plasmasDAIMINGER, F; NEPPERT, B; FORCHEL, A et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 397-403, issn 0370-1972Conference Paper

Static memory element based on electron Y-branch switchHARTMANN, D; REITZENSTEIN, S; WORSCHECH, L et al.Electronics Letters. 2005, Vol 41, Num 6, pp 303-304, issn 0013-5194, 2 p.Article

Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effectKUDRAWIEC, R; MISIEWICZ, J; FISHER, M et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 364-367, issn 0031-8965, 4 p.Conference Paper

Lateral quantization effects in the optical properties of barrier modulated InGaAs/GaAs wiresGREUS, C; SPIEGEL, R; FALLER, F et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 139-142, issn 1155-4339Conference Paper

Optical study of Ar⁺ implantation-induced damage in GaAs/GaAlAs heterostructuresKIESLICH, A; STRAKA, J; FORCHEL, A et al.Journal of applied physics. 1992, Vol 72, Num 12, pp 6014-6016, issn 0021-8979Article

Optical properties of fast-diffusing solid-state plasmasFORCHEL, A; SCHWEIZER, H; MAHLER, G et al.Physical review letters. 1983, Vol 51, Num 6, pp 501-504, issn 0031-9007Article